| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 3.9V @ 240µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-252-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.3A, 10V |
| Power Dissipation (Max): | 63W (Tc) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | IPD80R1K4CEBTMA1CT |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 570pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 800V |
| Detaljeret beskrivelse: | N-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount TO-252-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3.9A (Tc) |
| Email: | [email protected] |
