| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 2.4V @ 100µA |
| Vgs (Max): | 10V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | - |
| Serie: | HTMOS™ |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 100mA, 5V |
| Power Dissipation (Max): | 50W (Tj) |
| Emballage: | Tube |
| Pakke / tilfælde: | 8-CDIP Exposed Pad |
| Driftstemperatur: | - |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 290pF @ 28V |
| Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 5V |
| Afløb til Source Voltage (VDSS): | 55V |
| Detaljeret beskrivelse: | N-Channel 55V 50W (Tj) Through Hole |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | - |
| Email: | [email protected] |
