| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-3PN |
| Serie: | UniFET™ |
| Rds On (Max) @ Id, Vgs: | 35 mOhm @ 35A, 10V |
| Power Dissipation (Max): | 417W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-3P-3, SC-65-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 8 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3970pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 200V |
| Detaljeret beskrivelse: | N-Channel 200V 70A (Tc) 417W (Tc) Through Hole TO-3PN |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 70A (Tc) |
| Email: | [email protected] |
