| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 1.3V @ 250µA |
| Vgs (Max): | ±10V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | 4-DSBGA |
| Serie: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 17.1 mOhm @ 1A, 4.5V |
| Power Dissipation (Max): | 1.8W (Ta) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | 4-UFBGA, DSBGA |
| Andre navne: | 296-48118-1 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 35 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 862pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 2.5V, 4.5V |
| Afløb til Source Voltage (VDSS): | 12V |
| Detaljeret beskrivelse: | N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.6A (Ta) |
| Email: | [email protected] |
