| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 5V @ 1mA |
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-247 [B] |
| Serie: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 900 mOhm @ 7A, 10V |
| Power Dissipation (Max): | 500W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-247-3 |
| Andre navne: | APT14M100BMP APT14M100BMP-ND |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 17 Weeks |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 3965pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 1000V |
| Detaljeret beskrivelse: | N-Channel 1000V 14A (Tc) 500W (Tc) Through Hole TO-247 [B] |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 14A (Tc) |
| Email: | [email protected] |
