| Stav | New and Original |
|---|---|
| Původ | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (max) 'Id: | 4V @ 1mA |
| Vgs (Max): | ±20V |
| Technika: | MOSFET (Metal Oxide) |
| Dodavatel zařízení Package: | LPTS (D2PAK) |
| Série: | - |
| RDS On (Max) @ Id, Vgs: | 390 mOhm @ 3.8A, 10V |
| Ztráta energie (Max): | 40W (Tc) |
| Obal: | Tape & Reel (TR) |
| Paket / krabice: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Ostatní jména: | R6011ENJTLTR |
| Provozní teplota: | 150°C (TJ) |
| Typ montáže: | Surface Mount |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Výrobní standardní doba výroby: | 17 Weeks |
| Stav volného vedení / RoHS: | Lead free / RoHS Compliant |
| Vstupní kapacita (Ciss) (Max) @ Vds: | 670pF @ 25V |
| Nabíjení brány (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Typ FET: | N-Channel |
| FET Feature: | - |
| Napětí měniče (max. Zap. RDS, min. Zap. Zap.): | 10V |
| Drain na zdroj napětí (Vdss): | 600V |
| Detailní popis: | N-Channel 600V 11A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK) |
| Proud - kontinuální odtok (Id) @ 25 ° C: | 11A (Tc) |
| Email: | [email protected] |
| Obraz | Part Number | Výrobci | Popis | Pohled |
|---|---|---|---|---|
 |
R6011ENX | LAPIS Semiconductor | MOSFET N-CH 600V 11A TO220 | Dotaz |
 |
R6011030XXYA | Powerex, Inc. | RECTIFIER STUD MOUNT REVERSE DO- | Dotaz |
 |
R6012ANJTL | LAPIS Semiconductor | MOSFET N-CH 10V DRIVE LPTS | Dotaz |
|
R6011625XXYA | Powerex, Inc. | DIODE GEN PURP 1.6KV 250A DO205 | Dotaz |
|
R6011KNX | LAPIS Semiconductor | MOSFET N-CH 600V 11A TO220FM | Dotaz |
|
R6012025XXYA | Powerex, Inc. | DIODE GEN PURP 2KV 250A DO205 | Dotaz |
|
R6011230XXYA | Powerex, Inc. | DIODE GEN PURP 1.2KV 300A DO205 | Dotaz |
|
R6011630XXYA | Powerex, Inc. | DIODE GEN PURP 1.6KV 300A DO205 | Dotaz |
|
R6012ANX | LAPIS Semiconductor | MOSFET N-CH 600V 12A TO-220FM | Dotaz |
|
R6011225XXYA | Powerex, Inc. | DIODE GEN PURP 1.2KV 250A DO205 | Dotaz |
|
R6011025XXYA | Powerex, Inc. | RECTIFIER STUD MOUNT REVERSE DO- | Dotaz |
|
R6012030XXYA | Powerex, Inc. | DIODE GEN PURP 2KV 300A DO205 | Dotaz |
|
R6011KNJTL | LAPIS Semiconductor | MOSFET N-CHANNEL 600V 11A TO263 | Dotaz |
|
R6011825XXYA | Powerex, Inc. | DIODE GEN PURP 1.8KV 250A DO205 | Dotaz |
|
R6011430XXYA | Powerex, Inc. | DIODE GEN PURP 1.4KV 300A DO205 | Dotaz |
|
R6012625XXYA | Powerex, Inc. | DIODE GEN PURP 2.6KV 250A DO205 | Dotaz |
|
R6011830XXYA | Powerex, Inc. | DIODE GEN PURP 1.8KV 300A DO205 | Dotaz |
|
R6012225XXYA | Powerex, Inc. | DIODE GEN PURP 2.2KV 250A DO205 | Dotaz |
|
R6012425XXYA | Powerex, Inc. | DIODE GEN PURP 2.4KV 250A DO205 | Dotaz |
|
R6011425XXYA | Powerex, Inc. | DIODE GEN PURP 1.4KV 250A DO205 | Dotaz |