| Stav | New and Original |
|---|---|
| Původ | Contact us |
| Distributor | Boser Technology |
| Napětí - kolektoru emitoru Breakdown (Max): | 30V |
| VCE Saturation (Max) @ IB, IC: | 1.4V @ 30mA, 300mA |
| Transistor Type: | 2 NPN, 2 PNP |
| Dodavatel zařízení Package: | TO-116 |
| Série: | - |
| Power - Max: | 650mW |
| Obal: | Tube |
| Paket / krabice: | 14-DIP (0.300", 7.62mm) |
| Provozní teplota: | -65°C ~ 150°C (TJ) |
| Typ montáže: | Through Hole |
| Úroveň citlivosti na vlhkost (MSL): | 1 (Unlimited) |
| Stav volného vedení / RoHS: | Request inventory verification / Request inventory verification |
| Frekvence - Přechod: | 200MHz |
| Detailní popis: | Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 30V 500mA 200MHz 650mW Through Hole TO-116 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 300mA, 10V |
| Aktuální - sběratel Cutoff (Max): | 30nA (ICBO) |
| Proud - Collector (Ic) (Max): | 500mA |
| Email: | [email protected] |
