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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > UNR421D00A
UNR421D00A
UNR421D00A
Part Number:
UNR421D00A
Manufacturer:
Panasonic
Description:
TRANS PREBIAS NPN 300MW NS-B1
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
64732 Pieces
Delivery Time:
1-2 days
Data sheet:
UNR421D00A.pdf
Inquiry

Introduction

UNR421D00A best price and fast delivery.
BOSER Technology is the distributor for UNR421D00A, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for UNR421D00A by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:NPN - Pre-Biased
Supplier Device Package:NS-B1
Series:-
Resistor - Emitter Base (R2):10 kOhms
Resistor - Base (R1):47 kOhms
Power - Max:300mW
Packaging:Tape & Box (TB)
Package / Case:NS-B1
Other Names:UNR421D00ATB
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:150MHz
Detailed Description:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150MHz 300mW Through Hole NS-B1
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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