TJ60S04M3L(T6L1,NQ
Part Number:
TJ60S04M3L(T6L1,NQ
Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P-CH 40V 60A DPAK-3
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
59458 Pieces
Delivery Time:
1-2 days
Data sheet:
1.TJ60S04M3L(T6L1,NQ.pdf2.TJ60S04M3L(T6L1,NQ.pdf

Introduction

TJ60S04M3L(T6L1,NQ best price and fast delivery.
BOSER Technology is the distributor for TJ60S04M3L(T6L1,NQ, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for TJ60S04M3L(T6L1,NQ by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3V @ 1mA
Vgs (Max):+10V, -20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK+
Series:U-MOSVI
Rds On (Max) @ Id, Vgs:6.3 mOhm @ 30A, 10V
Power Dissipation (Max):90W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:TJ60S04M3L(T6L1NQ
TJ60S04M3LT6L1NQ
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:6510pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:125nC @ 10V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):40V
Detailed Description:P-Channel 40V 60A (Ta) 90W (Tc) Surface Mount DPAK+
Current - Continuous Drain (Id) @ 25°C:60A (Ta)
Email:[email protected]

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