STH315N10F7-6
STH315N10F7-6
Part Number:
STH315N10F7-6
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 100V 180A H2PAK-6
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
46062 Pieces
Delivery Time:
1-2 days
Data sheet:
STH315N10F7-6.pdf

Introduction

STH315N10F7-6 best price and fast delivery.
BOSER Technology is the distributor for STH315N10F7-6, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for STH315N10F7-6 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:H2PAK-6
Series:DeepGATE™, STripFET™ VII
Rds On (Max) @ Id, Vgs:2.3 mOhm @ 60A, 10V
Power Dissipation (Max):315W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
Other Names:497-14719-1
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:38 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:12800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:180nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Email:[email protected]

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