SQM120N10-09_GE3
SQM120N10-09_GE3
Part Number:
SQM120N10-09_GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 100V 120A TO263
Quantity:
48080 Pieces
Delivery Time:
1-2 days
Data sheet:
SQM120N10-09_GE3.pdf

Introduction

SQM120N10-09_GE3 best price and fast delivery.
BOSER Technology is the distributor for SQM120N10-09_GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SQM120N10-09_GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263 (D²Pak)
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:9.5 mOhm @ 30A, 10V
Power Dissipation (Max):375W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:8645pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:180nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Email:[email protected]

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