SQD50N10-8M9L_GE3
SQD50N10-8M9L_GE3
Part Number:
SQD50N10-8M9L_GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CHAN 100V TO252
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
54497 Pieces
Delivery Time:
1-2 days
Data sheet:
SQD50N10-8M9L_GE3.pdf

Introduction

SQD50N10-8M9L_GE3 best price and fast delivery.
BOSER Technology is the distributor for SQD50N10-8M9L_GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SQD50N10-8M9L_GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:8.9 mOhm @ 15A, 10V
Power Dissipation (Max):136W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:SQD50N10-8M9L_GE3CT
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2950pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 50A (Tc) 136W (Tc) Surface Mount TO-252
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments