SISS40DN-T1-GE3
SISS40DN-T1-GE3
Part Number:
SISS40DN-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 100V 36.5A PPAK 1212
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
62713 Pieces
Delivery Time:
1-2 days
Data sheet:
SISS40DN-T1-GE3.pdf

Introduction

SISS40DN-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SISS40DN-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SISS40DN-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Series:ThunderFET®
Rds On (Max) @ Id, Vgs:21 mOhm @ 10A, 10V
Power Dissipation (Max):3.7W (Ta), 52W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:SISS40DN-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:845pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 36.5A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:36.5A (Tc)
Email:[email protected]

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