| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PowerPAK® 8 x 8 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 12A, 10V |
| Power Dissipation (Max): | 202W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 8-PowerTDFN |
| Other Names: | SIHH24N65E-T1-GE3CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 2814pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 116nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 650V |
| Detailed Description: | N-Channel 650V 23A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8 |
| Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
| Email: | [email protected] |
