SIHG64N65E-GE3
Part Number:
SIHG64N65E-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 650V 64A TO247AC
Quantity:
55465 Pieces
Delivery Time:
1-2 days
Data sheet:
SIHG64N65E-GE3.pdf

Introduction

SIHG64N65E-GE3 best price and fast delivery.
BOSER Technology is the distributor for SIHG64N65E-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIHG64N65E-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247AC
Series:-
Rds On (Max) @ Id, Vgs:47 mOhm @ 32A, 10V
Power Dissipation (Max):520W (Tc)
Package / Case:TO-247-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:7497pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:369nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 64A (Tc) 520W (Tc) Through Hole TO-247AC
Current - Continuous Drain (Id) @ 25°C:64A (Tc)
Email:[email protected]

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