SIHB12N50C-E3
SIHB12N50C-E3
Part Number:
SIHB12N50C-E3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 500V 12A D2PAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
90921 Pieces
Delivery Time:
1-2 days
Data sheet:
SIHB12N50C-E3.pdf

Introduction

SIHB12N50C-E3 best price and fast delivery.
BOSER Technology is the distributor for SIHB12N50C-E3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIHB12N50C-E3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263)
Series:-
Rds On (Max) @ Id, Vgs:555 mOhm @ 4A, 10V
Power Dissipation (Max):208W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1375pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:48nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500V
Detailed Description:N-Channel 500V 12A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments