SIE836DF-T1-E3
SIE836DF-T1-E3
Part Number:
SIE836DF-T1-E3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 200V 18.3A POLARPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
70851 Pieces
Delivery Time:
1-2 days
Data sheet:
SIE836DF-T1-E3.pdf

Introduction

SIE836DF-T1-E3 best price and fast delivery.
BOSER Technology is the distributor for SIE836DF-T1-E3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIE836DF-T1-E3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:10-PolarPAK® (SH)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:130 mOhm @ 4.1A, 10V
Power Dissipation (Max):5.2W (Ta), 104W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:10-PolarPAK® (SH)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:41nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 18.3A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (SH)
Current - Continuous Drain (Id) @ 25°C:18.3A (Tc)
Email:[email protected]

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