SIA427ADJ-T1-GE3
SIA427ADJ-T1-GE3
Part Number:
SIA427ADJ-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET P-CH 8V 12A 6SC-70
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
82047 Pieces
Delivery Time:
1-2 days
Data sheet:
SIA427ADJ-T1-GE3.pdf

Introduction

SIA427ADJ-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SIA427ADJ-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIA427ADJ-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±5V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SC-70-6 Single
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:16 mOhm @ 8.2A, 4.5V
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SC-70-6
Other Names:SIA427ADJ-T1-GE3-ND
SIA427ADJ-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2300pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:50nC @ 5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Drain to Source Voltage (Vdss):8V
Detailed Description:P-Channel 8V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Email:[email protected]

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