| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Test: | - |
| Voltage - Breakdown: | 6-TSOP |
| Vgs(th) (Max) @ Id: | 125 mOhm @ 2.4A, 4.5V |
| Series: | TrenchFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 2A |
| Power - Max: | 830mW |
| Polarization: | SOT-23-6 Thin, TSOT-23-6 |
| Other Names: | SI3900DV-T1-E3TR SI3900DVT1E3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 15 Weeks |
| Manufacturer Part Number: | SI3900DV-T1-E3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 4nC @ 4.5V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.5V @ 250µA |
| FET Feature: | 2 N-Channel (Dual) |
| Expanded Description: | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
| Drain to Source Voltage (Vdss): | Logic Level Gate |
| Description: | MOSFET 2N-CH 20V 2A 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C: | 20V |
| Email: | [email protected] |
