SI1965DH-T1-GE3
Part Number:
SI1965DH-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET 2P-CH 12V 1.3A SC70-6
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
64744 Pieces
Delivery Time:
1-2 days
Data sheet:
SI1965DH-T1-GE3.pdf

Introduction

SI1965DH-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI1965DH-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI1965DH-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:1V @ 250µA
Supplier Device Package:SC-70-6 (SOT-363)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:390 mOhm @ 1A, 4.5V
Power - Max:1.25W
Packaging:Tape & Reel (TR)
Package / Case:6-TSSOP, SC-88, SOT-363
Other Names:SI1965DH-T1-GE3TR
SI1965DHT1GE3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:4.2nC @ 8V
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):12V
Detailed Description:Mosfet Array 2 P-Channel (Dual) 12V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363)
Current - Continuous Drain (Id) @ 25°C:1.3A
Base Part Number:SI1965
Email:[email protected]

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