SI1070X-T1-GE3
SI1070X-T1-GE3
Part Number:
SI1070X-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 30V 1.2A SOT563F
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
59936 Pieces
Delivery Time:
1-2 days
Data sheet:
SI1070X-T1-GE3.pdf

Introduction

SI1070X-T1-GE3 best price and fast delivery.
BOSER Technology is the distributor for SI1070X-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI1070X-T1-GE3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:1.55V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SC-89-6
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:99 mOhm @ 1.2A, 4.5V
Power Dissipation (Max):236mW (Ta)
Packaging:Cut Tape (CT)
Package / Case:SOT-563, SOT-666
Other Names:SI1070X-T1-GE3CT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:385pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:8.3nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 236mW (Ta) Surface Mount SC-89-6
Current - Continuous Drain (Id) @ 25°C:-
Email:[email protected]

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