RFD4N06LSM9A
Part Number:
RFD4N06LSM9A
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 60V 4A DPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
56189 Pieces
Delivery Time:
1-2 days
Data sheet:
RFD4N06LSM9A.pdf

Introduction

RFD4N06LSM9A best price and fast delivery.
BOSER Technology is the distributor for RFD4N06LSM9A, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for RFD4N06LSM9A by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252AA
Series:-
Rds On (Max) @ Id, Vgs:600 mOhm @ 1A, 5V
Power Dissipation (Max):30W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:8nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 4A (Tc) 30W (Tc) Surface Mount TO-252AA
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Email:[email protected]

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