RF4E100AJTCR
RF4E100AJTCR
Part Number:
RF4E100AJTCR
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET N-CH 30V 10A HUML2020L8
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
38607 Pieces
Delivery Time:
1-2 days
Data sheet:
1.RF4E100AJTCR.pdf2.RF4E100AJTCR.pdf

Introduction

RF4E100AJTCR best price and fast delivery.
BOSER Technology is the distributor for RF4E100AJTCR, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for RF4E100AJTCR by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:1.5V @ 1mA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:HUML2020L8
Series:-
Rds On (Max) @ Id, Vgs:12.4 mOhm @ 10A, 4.5V
Power Dissipation (Max):2W (Tc)
Packaging:Cut Tape (CT)
Package / Case:8-PowerUDFN
Other Names:RF4E100AJTCRCT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1460pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:13nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Email:[email protected]

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