R6009KNJTL
R6009KNJTL
Part Number:
R6009KNJTL
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET N-CHANNEL 600V 9A TO263
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
48883 Pieces
Delivery Time:
1-2 days
Data sheet:
1.R6009KNJTL.pdf2.R6009KNJTL.pdf

Introduction

R6009KNJTL best price and fast delivery.
BOSER Technology is the distributor for R6009KNJTL, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for R6009KNJTL by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263
Series:-
Rds On (Max) @ Id, Vgs:535 mOhm @ 2.8A, 10V
Power Dissipation (Max):94W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:R6009KNJTLTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:17 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:540pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:16.5nC @ 10V
FET Type:N-Channel
FET Feature:Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 9A (Tc) 94W (Tc) Surface Mount TO-263
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Email:[email protected]

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