| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | LFPAK56, Power-SO8 |
| Series: | TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 25A, 10V |
| Power Dissipation (Max): | 62.5W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | SC-100, SOT-669, 4-LFPAK |
| Other Names: | 1727-3051-1 568-2177-1 568-2177-1-ND |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 4308pF @ 12V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 4.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drain to Source Voltage (Vdss): | 25V |
| Detailed Description: | N-Channel 25V 100A (Tc) 62.5W (Tc) Surface Mount LFPAK56, Power-SO8 |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Email: | [email protected] |
