NVD4809NT4G
NVD4809NT4G
Part Number:
NVD4809NT4G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 30V 58A DPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
82996 Pieces
Delivery Time:
1-2 days
Data sheet:
NVD4809NT4G.pdf

Introduction

NVD4809NT4G best price and fast delivery.
BOSER Technology is the distributor for NVD4809NT4G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NVD4809NT4G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:-
Rds On (Max) @ Id, Vgs:9 mOhm @ 30A, 10V
Power Dissipation (Max):1.4W (Ta), 52W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1456pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 11.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 11.5V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C:9.6A (Ta), 58A (Tc)
Email:[email protected]

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