NTGS1135PT1G
Part Number:
NTGS1135PT1G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET P-CH 8V 4.6A 6-TSOP
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
59314 Pieces
Delivery Time:
1-2 days
Data sheet:
NTGS1135PT1G.pdf

Introduction

NTGS1135PT1G best price and fast delivery.
BOSER Technology is the distributor for NTGS1135PT1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NTGS1135PT1G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:850mV @ 250µA
Vgs (Max):±6V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-TSOP
Series:-
Rds On (Max) @ Id, Vgs:31 mOhm @ 4.6A, 4.5V
Power Dissipation (Max):970mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:SOT-23-6
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2200pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:21nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Drain to Source Voltage (Vdss):8V
Detailed Description:P-Channel 8V 4.6A (Ta) 970mW (Ta) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C:4.6A (Ta)
Email:[email protected]

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