NTD5865N-1G
NTD5865N-1G
Part Number:
NTD5865N-1G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 60V 43A DPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
41906 Pieces
Delivery Time:
1-2 days
Data sheet:
NTD5865N-1G.pdf

Introduction

NTD5865N-1G best price and fast delivery.
BOSER Technology is the distributor for NTD5865N-1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NTD5865N-1G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:-
Rds On (Max) @ Id, Vgs:18 mOhm @ 20A, 10V
Power Dissipation (Max):71W (Tc)
Packaging:Tube
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:NTD5865N-1G-ND
NTD5865N-1GOS
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1261pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C:43A (Tc)
Email:[email protected]

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