NTD3808N-1G
NTD3808N-1G
Part Number:
NTD3808N-1G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 16V 12A IPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
89334 Pieces
Delivery Time:
1-2 days
Data sheet:
NTD3808N-1G.pdf

Introduction

NTD3808N-1G best price and fast delivery.
BOSER Technology is the distributor for NTD3808N-1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NTD3808N-1G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I-PAK
Series:-
Rds On (Max) @ Id, Vgs:5.8 mOhm @ 15A, 10V
Power Dissipation (Max):1.3W (Ta), 52W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1660pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:21nC @ 4.5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):16V
Detailed Description:N-Channel 16V 12A (Ta), 76A (Tc) 1.3W (Ta), 52W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 76A (Tc)
Email:[email protected]

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