NJVMJD112T4G
NJVMJD112T4G
Part Number:
NJVMJD112T4G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
TRANS NPN DARL 100V 2A DPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
38415 Pieces
Delivery Time:
1-2 days
Data sheet:
NJVMJD112T4G.pdf

Introduction

NJVMJD112T4G best price and fast delivery.
BOSER Technology is the distributor for NJVMJD112T4G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NJVMJD112T4G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):100V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 4A
Transistor Type:NPN - Darlington
Supplier Device Package:DPAK
Series:-
Power - Max:20W
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:7 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:25MHz
Detailed Description:Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 20W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 2A, 3V
Current - Collector Cutoff (Max):20µA
Current - Collector (Ic) (Max):2A
Base Part Number:MJD112
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments