NDDL01N60Z-1G
NDDL01N60Z-1G
Part Number:
NDDL01N60Z-1G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 600V 0.8A IPAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
86152 Pieces
Delivery Time:
1-2 days
Data sheet:
NDDL01N60Z-1G.pdf

Introduction

NDDL01N60Z-1G best price and fast delivery.
BOSER Technology is the distributor for NDDL01N60Z-1G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for NDDL01N60Z-1G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4.5V @ 50µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:IPAK (TO-251)
Series:-
Rds On (Max) @ Id, Vgs:15 Ohm @ 400mA, 10V
Power Dissipation (Max):26W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):3 (168 Hours)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:92pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:4.9nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 800mA (Ta) 26W (Tc) Through Hole IPAK (TO-251)
Current - Continuous Drain (Id) @ 25°C:800mA (Ta)
Email:[email protected]

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