MUN5213DW1T3G
MUN5213DW1T3G
Part Number:
MUN5213DW1T3G
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
TRANS 2NPN PREBIAS 0.25W SOT363
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
58406 Pieces
Delivery Time:
1-2 days
Data sheet:
MUN5213DW1T3G.pdf

Introduction

MUN5213DW1T3G best price and fast delivery.
BOSER Technology is the distributor for MUN5213DW1T3G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for MUN5213DW1T3G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:2 NPN - Pre-Biased (Dual)
Supplier Device Package:SC-88/SC70-6/SOT-363
Series:-
Resistor - Emitter Base (R2):47 kOhms
Resistor - Base (R1):47 kOhms
Power - Max:250mW
Packaging:Tape & Reel (TR)
Package / Case:6-TSSOP, SC-88, SOT-363
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:40 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
Base Part Number:MUN52**DW1T
Email:[email protected]

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