MT3S111P(TE12L,F)
MT3S111P(TE12L,F)
Part Number:
MT3S111P(TE12L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Description:
RF SIGE HETEROJUNCTION BIPOLAR N
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
47211 Pieces
Delivery Time:
1-2 days
Data sheet:
MT3S111P(TE12L,F).pdf

Introduction

MT3S111P(TE12L,F) best price and fast delivery.
BOSER Technology is the distributor for MT3S111P(TE12L,F), we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for MT3S111P(TE12L,F) by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):6V
Transistor Type:NPN
Supplier Device Package:PW-MINI
Series:-
Power - Max:1W
Packaging:Cut Tape (CT)
Package / Case:TO-243AA
Other Names:MT3S111P(TE12LF)CT
Operating Temperature:150°C (TJ)
Noise Figure (dB Typ @ f):1.25dB @ 1GHz
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Gain:10.5dB
Frequency - Transition:8GHz
Detailed Description:RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Email:[email protected]

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