| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Collector Emitter Breakdown (Max): | 100V |
| Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
| Transistor Type: | NPN |
| Supplier Device Package: | I-PAK |
| Series: | - |
| Power - Max: | 1.56W |
| Packaging: | Tube |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Other Names: | MJD31C1G-ND MJD31C1GOS |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 2 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 3MHz |
| Detailed Description: | Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
| Current - Collector Cutoff (Max): | 50µA |
| Current - Collector (Ic) (Max): | 3A |
| Base Part Number: | MJD31 |
| Email: | [email protected] |
