JANTXV1N649-1
Part Number:
JANTXV1N649-1
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 600V 400MA DO35
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
80291 Pieces
Delivery Time:
1-2 days
Data sheet:
JANTXV1N649-1.pdf

Introduction

JANTXV1N649-1 best price and fast delivery.
BOSER Technology is the distributor for JANTXV1N649-1, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for JANTXV1N649-1 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Peak Reverse (Max):Standard
Voltage - Forward (Vf) (Max) @ If:400mA
Voltage - Breakdown:DO-35
Series:Military, MIL-PRF-19500/240
RoHS Status:Bulk
Reverse Recovery Time (trr):Standard Recovery >500ns, > 200mA (Io)
Resistance @ If, F:-
Polarization:DO-204AH, DO-35, Axial
Other Names:1086-15996
1086-15996-MIL
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:JANTXV1N649-1
Expanded Description:Diode Standard 600V 400mA Through Hole DO-35
Diode Configuration:50nA @ 600V
Description:DIODE GEN PURP 600V 400MA DO35
Current - Reverse Leakage @ Vr:1V @ 400mA
Current - Average Rectified (Io) (per Diode):600V
Capacitance @ Vr, F:-65°C ~ 175°C
Email:[email protected]

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