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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JAN2N3507
JAN2N3507
Part Number:
JAN2N3507
Manufacturer:
Microsemi
Description:
TRANS NPN 50V 3A TO39
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
58512 Pieces
Delivery Time:
1-2 days
Data sheet:
JAN2N3507.pdf
Inquiry

Introduction

JAN2N3507 best price and fast delivery.
BOSER Technology is the distributor for JAN2N3507, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for JAN2N3507 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 250mA, 2.5A
Transistor Type:NPN
Supplier Device Package:TO-39 (TO-205AD)
Series:Military, MIL-PRF-19500/349
Power - Max:1W
Packaging:Bulk
Package / Case:TO-205AD, TO-39-3 Metal Can
Other Names:1086-20847
1086-20847-MIL
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:22 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Frequency - Transition:-
Detailed Description:Bipolar (BJT) Transistor NPN 50V 3A 1W Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 1.5A, 2V
Current - Collector Cutoff (Max):-
Current - Collector (Ic) (Max):3A
Email:[email protected]

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