JAN1N6661US
JAN1N6661US
Part Number:
JAN1N6661US
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 225V 500MA D5A
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
67260 Pieces
Delivery Time:
1-2 days
Data sheet:
JAN1N6661US.pdf

Introduction

JAN1N6661US best price and fast delivery.
BOSER Technology is the distributor for JAN1N6661US, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for JAN1N6661US by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Peak Reverse (Max):Standard
Voltage - Forward (Vf) (Max) @ If:500mA
Voltage - Breakdown:D-5A
Series:Military, MIL-PRF-19500/587
RoHS Status:Bulk
Reverse Recovery Time (trr):Standard Recovery >500ns, > 200mA (Io)
Resistance @ If, F:-
Polarization:SQ-MELF, A
Other Names:1086-16019
1086-16019-MIL
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:JAN1N6661US
Expanded Description:Diode Standard 225V 500mA Surface Mount D-5A
Diode Configuration:50nA @ 225V
Description:DIODE GEN PURP 225V 500MA D5A
Current - Reverse Leakage @ Vr:1V @ 400mA
Current - Average Rectified (Io) (per Diode):225V
Capacitance @ Vr, F:-65°C ~ 175°C
Email:[email protected]

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