JAN1N5416US
JAN1N5416US
Part Number:
JAN1N5416US
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 100V 3A AXIAL
[LeadFreeStatus]未找到翻译
Contains lead / RoHS non-compliant
Quantity:
53905 Pieces
Delivery Time:
1-2 days
Data sheet:
JAN1N5416US.pdf

Introduction

JAN1N5416US best price and fast delivery.
BOSER Technology is the distributor for JAN1N5416US, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for JAN1N5416US by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Forward (Vf) (Max) @ If:1.5V @ 9A
Voltage - DC Reverse (Vr) (Max):100V
Speed:Fast Recovery = 200mA (Io)
Series:Military, MIL-PRF-19500/411
Reverse Recovery Time (trr):150ns
Packaging:Bulk
Package / Case:B, Axial
Other Names:1086-2087
1086-2087-MIL
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:8 Weeks
Lead Free Status / RoHS Status:Contains lead / RoHS non-compliant
Diode Type:Standard
Detailed Description:Diode Standard 100V 3A Through Hole
Current - Reverse Leakage @ Vr:1µA @ 100V
Current - Average Rectified (Io):3A
Capacitance @ Vr, F:-
Email:[email protected]

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