| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-3P |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 55 mOhm @ 30A, 10V |
| Power Dissipation (Max): | 890W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-3P-3, SC-65-3 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 24 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 143nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 600V |
| Detailed Description: | N-Channel 600V 60A (Tc) 890W (Tc) Through Hole TO-3P |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Email: | [email protected] |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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IXFQ26N50Q | IXYS Corporation | MOSFET N-CH 500V 26A TO-3P | Inquiry |
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IXFQ50N60X | IXYS Corporation | MOSFET N-CH 600V 50A TO3P | Inquiry |
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