IXFP12N65X2
IXFP12N65X2
Part Number:
IXFP12N65X2
Manufacturer:
IXYS Corporation
Description:
MOSFET N-CH
Quantity:
52840 Pieces
Delivery Time:
1-2 days
Data sheet:
IXFP12N65X2.pdf

Introduction

IXFP12N65X2 best price and fast delivery.
BOSER Technology is the distributor for IXFP12N65X2, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IXFP12N65X2 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:HiPerFET™
Rds On (Max) @ Id, Vgs:310 mOhm @ 6A, 10V
Power Dissipation (Max):180W (Tc)
Package / Case:TO-220-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Manufacturer Standard Lead Time:24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:1134pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:18.5nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 12A (Tc) 180W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Email:[email protected]

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