IXFH60N65X2-4
Part Number:
IXFH60N65X2-4
Manufacturer:
IXYS Corporation
Description:
MOSFET N-CH
Quantity:
76552 Pieces
Delivery Time:
1-2 days
Data sheet:
IXFH60N65X2-4.pdf

Introduction

IXFH60N65X2-4 best price and fast delivery.
BOSER Technology is the distributor for IXFH60N65X2-4, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IXFH60N65X2-4 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:5V @ 4mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247-4L
Series:HiPerFET™
Rds On (Max) @ Id, Vgs:52 mOhm @ 30A, 10V
Power Dissipation (Max):780W (Tc)
Package / Case:TO-247-4
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Manufacturer Standard Lead Time:24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:6300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:108nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650V
Detailed Description:N-Channel 650V 60A (Tc) 780W (Tc) Through Hole TO-247-4L
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Email:[email protected]

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