| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-262 |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 42 mOhm @ 12A, 4.5V |
| Power Dissipation (Max): | - |
| Packaging: | Tube |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1460pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | P-Channel 20V 24A (Tc) Through Hole TO-262 |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
| Email: | [email protected] |
