| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
| Supplier Device Package: | 8-PQFN (3.3x3.3), Power33 |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 14.9 mOhm @ 10A, 10V |
| Power - Max: | 2.7W |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 8-PowerVDFN |
| Other Names: | IRFHM8363TR2PBFCT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1165pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | Mosfet Array 2 N-Channel (Dual) 30V 11A 2.7W Surface Mount 8-PQFN (3.3x3.3), Power33 |
| Current - Continuous Drain (Id) @ 25°C: | 11A |
| Base Part Number: | IRFHM8363PBF |
| Email: | [email protected] |
