| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-262 |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 43A, 10V |
| Power Dissipation (Max): | 180W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Other Names: | *IRF1010NLPBF |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 3210pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 55V |
| Detailed Description: | N-Channel 55V 85A (Tc) 180W (Tc) Through Hole TO-262 |
| Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
| Email: | [email protected] |
