| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4.5V @ 200µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO-220-3 |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 660 mOhm @ 2.1A, 10V |
| Power Dissipation (Max): | 62.5W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Other Names: | IPP65R660CFD IPP65R660CFD-ND SP000745026 |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 615pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 650V |
| Detailed Description: | N-Channel 650V 6A (Tc) 62.5W (Tc) Through Hole PG-TO-220-3 |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Email: | [email protected] |
