| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Vgs(th) (Max) @ Id: | 4V @ 270µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO262-3 |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 4.1 mOhm @ 100A, 10V |
| Power Dissipation (Max): | 300W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Other Names: | IPI041N12N3 G IPI041N12N3 G-ND IPI041N12N3G SP000652748 |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 13800pF @ 60V |
| Gate Charge (Qg) (Max) @ Vgs: | 211nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 120V |
| Detailed Description: | N-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3 |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Email: | [email protected] |
