IPD082N10N3GBTMA1
IPD082N10N3GBTMA1
Part Number:
IPD082N10N3GBTMA1
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 100V 80A TO252-3
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
34707 Pieces
Delivery Time:
1-2 days
Data sheet:
IPD082N10N3GBTMA1.pdf

Introduction

IPD082N10N3GBTMA1 best price and fast delivery.
BOSER Technology is the distributor for IPD082N10N3GBTMA1, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IPD082N10N3GBTMA1 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3.5V @ 75µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:8.2 mOhm @ 73A, 10V
Power Dissipation (Max):125W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:IPD082N10N3 G
IPD082N10N3 G-ND
IPD082N10N3GBTMA1TR
SP000485986
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3980pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Email:[email protected]

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