HUFA76609D3
HUFA76609D3
Part Number:
HUFA76609D3
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 100V 10A TO-251AA
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
46001 Pieces
Delivery Time:
1-2 days
Data sheet:
HUFA76609D3.pdf

Introduction

HUFA76609D3 best price and fast delivery.
BOSER Technology is the distributor for HUFA76609D3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HUFA76609D3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-251AA
Series:UltraFET™
Rds On (Max) @ Id, Vgs:160 mOhm @ 10A, 10V
Power Dissipation (Max):49W (Tc)
Packaging:Tube
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:425pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100V
Detailed Description:N-Channel 100V 10A (Tc) 49W (Tc) Through Hole TO-251AA
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Email:[email protected]

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