HN4B01JE(TE85L,F)
HN4B01JE(TE85L,F)
Part Number:
HN4B01JE(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS NPN/PNP 50V 0.15A ESV PLN
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
69242 Pieces
Delivery Time:
1-2 days
Data sheet:
HN4B01JE(TE85L,F).pdf

Introduction

HN4B01JE(TE85L,F) best price and fast delivery.
BOSER Technology is the distributor for HN4B01JE(TE85L,F), we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HN4B01JE(TE85L,F) by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor Type:NPN, PNP (Emitter Coupled)
Supplier Device Package:ESV
Series:-
Power - Max:100mW
Packaging:Cut Tape (CT)
Package / Case:SOT-553
Other Names:HN4B01JE(TE85LF)CT
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:80MHz
Detailed Description:Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 80MHz 100mW Surface Mount ESV
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 10MA, 100MA
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):150mA
Email:[email protected]

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