GT60N321(Q)
Part Number:
GT60N321(Q)
Manufacturer:
Toshiba Semiconductor and Storage
Description:
IGBT 1000V 60A 170W TO3P LH
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
60791 Pieces
Delivery Time:
1-2 days
Data sheet:
GT60N321(Q).pdf

Introduction

GT60N321(Q) best price and fast delivery.
BOSER Technology is the distributor for GT60N321(Q), we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for GT60N321(Q) by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):1000V
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 60A
Test Condition:-
Td (on/off) @ 25°C:330ns/700ns
Switching Energy:-
Supplier Device Package:TO-3P(LH)
Series:-
Reverse Recovery Time (trr):2.5µs
Power - Max:170W
Packaging:Tube
Package / Case:TO-3PL
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:-
Detailed Description:IGBT 1000V 60A 170W Through Hole TO-3P(LH)
Current - Collector Pulsed (Icm):120A
Current - Collector (Ic) (Max):60A
Base Part Number:GT60
Email:[email protected]

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